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Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin El

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  5. EPC2034C
EPC2034C
EPC2034C
Favorite Products
EPC2034C
EPC2034C
EPC
GANFET N-CH 200V 48A DIE
Transistors - FETs, MOSFETs - Single
EPC2034C_datasheet.pdf
9999
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
-
Current - Continuous Drain (Id) @ 25°C
48A (Ta)
Rds On (Max) @ Id, Vgs
8mOhm @ 20A, 5V
Mounting Type
Surface Mount
Mfr
EPC
Package
Tape & Reel (TR)^^Cut Tape (CT)^^Digi-Reel®
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Vgs (Max)
+6V, -4V
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
EPC2034
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1140 pF @ 100 V
Series
eGaN®
Package / Case
Die
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
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Yangzhou Yangjie Electronic Technology Co.,Ltd

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