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Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin El

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FQP8P10
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FQP8P10
FQP8P10
onsemi
MOSFET P-CH 100V 8A TO220-3
Transistors - FETs, MOSFETs - Single
fqp8p10-d.pdf
TO220B03_Pkg_Dwg.pdf
9999
9999 In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
QFET®
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Mfr
onsemi
Drain to Source Voltage (Vdss)
100 V
Base Product Number
FQP8
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
FET Feature
-
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Vgs (Max)
±30V
Mounting Type
Through Hole
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Obsolete
Vgs(th) (Max) @ Id
4V @ 250µA
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