Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinFLAT/RM 29,22/F,YAN'S TOWER,25-27 WONG CHUK HANG ROAD,ABERDEEN HKJoin-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin El

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FQPF630
FQPF630
onsemi
MOSFET N-CH 200V 6.3A TO220F
fqpf630-d.pdf
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4V @ 250µA
Mounting Type
Through Hole
Base Product Number
FQPF6
Vgs (Max)
±25V
Series
QFET®
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Mfr
onsemi
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Product Status
Obsolete
Package
Tube
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
400mOhm @ 3.15A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
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