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What Are Linear Integrated Circuits? Principle Types Of Linear Integrated Circuits

What Are Linear Integrated Circuits? Principle Types Of Linear Integrated Circuits

September 28 , 2023 0

A linear integrated circuit is a type of integrated circuit based on an amplifier. The term linear is used to indicate that the response of an amplifier to an input signal is usually linear. Later, such circuits included oscillators, timers, and many non-linear circuits such as data conversion dews, and circuits that combine digital and linear functions. Since the information processed involves continuously varying physical quantities (analogue quantities), these circuits are also referred to as analogue integrated circuits.

Linear Integrated Circuits Overview

In the early 1960s, a simple integrated amplifier was made from semiconductor silicon wafers. Integrated circuits have several design advantages over discrete component circuits. Since all the devices are fabricated simultaneously on a very small chip, their characteristics are very consistent and the component parameters have high scaling accuracy. Linear circuits usually require the use of different types of devices in a circuit, and are therefore difficult to integrate, and the initial development was slow. 1966, a high-performance general-purpose operational amplifier was introduced. 1970s various high-precision digital-to-analog and analogue-to-digital converters have become the key devices in digital technology and information processing, and have been widely used.

Linear Integrated Circuit Classification

① General-purpose circuits, including operational amplifiers, voltage comparators, voltage regulator power supply circuits, etc.
② Industrial control and measurement circuits, including timers, waveform generators, detectors, analogue multipliers, analogue switches, motor drive circuits, power control circuits, etc.
(iii) Data conversion circuits, including digital-to-analogue and analogue-to-digital converters, voltage-to-frequency converters, and so on.
④Communication circuits, including telephone circuits, mobile communication circuits, etc.
⑤ Consumer circuits, including TV sets, VCRs, audio circuits, etc. In fact, there are many other application circuits, such as pacemakers and other medical circuits. Most linear integrated circuits are manufactured using the standard bipolar process; later, a new metal-oxide-semiconductor (MOS) process was developed.

Characteristics of Linear Integrated Circuits

1, linear integrated circuit structure characteristics

Linear integrated circuits are generally manufactured using standard bipolar processes. In order to obtain high-performance circuits, sometimes in the standard process based on certain modifications or to take additional manufacturing processes, in order to produce a variety of components and devices of different performance on the same chip. A technique for fabricating high-performance junction field effect transistors on a bipolar chip. When the chip after the formation of NPN tubes, respectively, with two ion implantation technology doping to form a low concentration of P - type channel and high concentration of N + type gate area of the gate - leakage breakdown voltage of up to 50 ~ 60 volts, clamping voltage can be controlled at about 1 volt. The usual breakdown diode using NPN transistor eb junction, the breakdown phenomenon occurs on the surface of the junction. The sub-surface breakdown diode is in the N + type emission region with ion implantation method to produce a high concentration of P + type layer, deep below the surface to form a N + - P + junction. The breakdown voltage of this transistor is lower than the breakdown voltage of the surface junction, the breakdown process is not affected by the surface condition, low noise, and has good long-term stability.

2, linear integrated circuit functional characteristics

Linear bipolar process can usually achieve 50 to 60 volts of voltage withstand performance. To obtain nearly 100 volts or higher voltage performance, the following measures can be taken:

　　① Increase the thickness of the N-type epitaxial layer (e.g., 20 microns or more) to increase the breakdown voltage of the NPN tube;

　　② Increase the thickness of the oxide layer to prevent the negatively charged metal interconnects from generating parasitic MOS tube effects when crossing the lateral PNP transistor;

　　(iii) Protect the surface of the isolation junction with field electrodes to avoid over-concentration of the electric field, resulting in a lower breakdown voltage.

　　Linear CMOS Technology This is a very complex and versatile compatibility technology that enables the simultaneous fabrication of a variety of bipolar and CMOS devices. High-performance linear circuits can be combined with high-density, high-speed logic circuits on a single chip using this technology. A refractory metal molybdenum as the gate material of the linear CMOS process, the P-channel and N-channel MOS devices can be produced in the linear bipolar chip on the N-type epitaxial layer, only 10 photolithography, which has aluminium and molybdenum interconnections between the two layers. P-channel and N-channel devices can be separate or share a common N-region.

Linear Integrated Circuit Fabrication Process

Most linear integrated circuits are manufactured using a standard bipolar process. In order to obtain high-performance circuits, sometimes certain modifications are made to the standard process or additional manufacturing processes are taken in order to fabricate a variety of components and devices with different properties on the same chip.
Bipolar-Field Effect Compatible Technology A technology for fabricating high-performance junction field effect transistors on a bipolar chip. When the chip after the formation of NPN tubes, respectively, with two ion implantation technology doping to form a low concentration of P - type channel and high concentration of N + type gate area. The gate - drain breakdown voltage of up to 50 ~ 60 volts, pinch-off voltage can be controlled at about 1 volt.
Super gain transistors NPN transistors with a common emitter current gain of up to 1000-5000. With ion implantation technology to produce the base area, the base area doping concentration is one order of magnitude lower than the usual NPN tube base area, the base area thickness is thinner than the usual NPN tube base area.
Sub-surface Breakdown Diodes The usual breakdown diode utilises the eb junction of the NPN transistor, where breakdown occurs at the surface of the junction. Sub-surface breakdown diode is in the N + type emitting region under the ion implantation method to produce a high concentration of P + type layer, deep below the surface to form a N + - P + junction. The breakdown voltage of this transistor is lower than that of the surface junction, and the breakdown process is independent of the surface condition, with low noise and good long-term stability.