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Opportunities And Challenges OF Domestic Storage Industry

Opportunities And Challenges OF Domestic Storage Industry

April 02 , 2024 0

In the 3C segment (consumer, communications, PC), non-volatile NAND flash storage dominates, but also plays an important role in high-reliability markets such as industrial, automotive, and medical. With the rapid development of the domestic electronics industry, the Internet of Things and 5G technology have put forward new requirements for memory.
At the "2024 China IC Leadership Summit" held at the same time of the IIC Shanghai 2024 International IC Exhibition and Conference, Chen Lei, deputy general manager of Dongxin Semiconductor, analyzed the current opportunities and challenges of the storage industry with the theme of "New Storage Zhiyuan, focusing on demand, Driving Innovation core momentum". It also shared the achievements made by Dongxin Semiconductor in memory localization.

Opportunities And Challenges Coexist In The Storage Industry

The volatility of the memory market has significant commodity characteristics, especially large-capacity DRAM, whose market changes are similar to commodity trading properties, showing obvious cyclical changes, about every 3-4 years for a cycle. In 2022, the entire memory market decreased by 6% compared with 2021, Chen Lei said that although the proportion may not seem high, considering that memory accounts for one-third of the semiconductor market, its impact on the semiconductor industry is still significant.

Although the 2023 financial results have not yet been released, the entire memory market is expected to pick up, and the market size is expected to reach about $540 billion. For 2024, some research institutions are optimistic that the memory market will grow by 30%-40%, with the main growth drivers coming from DRAM and NAND flash, as well as strong demand for memory for smart devices, mobile phone servers, AI servers and automotive electronics. Therefore, 2024 will be an upward year for the memory industry.
From the perspective of suppliers, whether it is volatile DRAM or non-volatile NAND flash, the major suppliers in the world are relatively concentrated. The DRAM market is dominated by Samsung, Hynix and Micron with a combined market share of nearly 95%, with the remaining vendors competing for the remaining 5%. Similarly, in the field of NAND flash, Samsung, Hynix, Micron, Western Digital and Kaixia also account for 95% of the market share.

Taking China's annual import of memory chips from South Korea as an example, Hynix and Samsung alone reached 80 billion US dollars, showing huge import dependence and domestic substitution potential.

Combined with the above highly concentrated supply pattern, it means that domestic enterprises in these areas of domestic substitution space is huge.

In addition, with the rapid growth of data volume, the importance of memory has become increasingly prominent.

From the PC era to the Internet era, with the rapid development of emerging technologies such as 5G, AI, and the Internet of Things, to today's era of smartphones and artificial intelligence, the amount of data is exploding at a rate that is more difficult to measure. According to the "Data Age 2025" released by IDC, the total amount of global data will increase by 10 times from 2016 to 2025, reaching 163ZB. The storage capacity of smartphones has also increased from 16GB to 128GB and beyond.

Whether it is data storage on personal devices, or the large amount of storage space required for data centers and AI training, it puts higher demands on memory performance.

Therefore, high performance and low power consumption have become the two key trends in the current memory development.

Especially with the interest and widespread popularity of new energy vehicles, the automotive industry has shown the new four characteristics of intelligence, electrification, network connection and sharing.

Car-level memory has also become an emerging field, and the demand for large-capacity, high-reliability storage products has shown explosive growth. However, it is worth noting that the data shows that in 2023, China's foreign dependence on automotive chips is as high as 95%, and the localization rate is very low, so the automotive chip market has huge development prospects and domestic alternative space.

Dongxin Semiconductor's Memory Localization Road

In order to promote the localization of memory, China has vigorously supported policies and issued a series of semiconductor development Outlines to support the continuous development of the memory chip industry.

The national government spent a lot of energy in the field of semiconductors, especially memory, in 2014 the state issued the so-called semiconductor development outline, in line with the national demand for semiconductors and memory field localization, East core semiconductor was established in 2014.

So far, Dongxin Semiconductor has grown into a local R & D and design company with independent intellectual property rights focusing on small and medium-sized memory chips. As a Fabless chip company, Dongxin focuses on the R & D, design and sales of small and medium-sized NAND Flash, NOR Flash and DRAM. At present, it is a few domestic memory chip R & D and design companies that can provide NAND/NOR/DRAM design process and product solutions at the same time.

At present, Dongxin has gradually expanded from the simple memory "storage" function to the "connection" field, and has established a number of research and development centers at home and abroad, including Shanghai and Seoul, South Korea. At the same time, it is also actively expanding downstream application fields and establishing cooperative relations with various customers.

According to Chen Lei, Dongxin's current NAND Flash process has been developed from 38nm to 28nm, and a more suitable nano process is currently being developed. NOR Flash has progressed from 65nm to 55nm, with 48nm. In terms of packaging and testing, Dongxin has production lines in Shanghai, Wuxi, Taiwan and South Korea, which allows flexible delivery of various products.

Dongxin's product line is very rich, covering SPI NAND Flash, PPI NAND Flash, NOR flash, DDR3 and LPDDR DRAM products, as well as MCP module products, mainly for modular customers. Chen Lei also don't emphasize: "Our products are positive design, with unique advantages. For example, SPI NAND Flash uses a single chip design, which is cost-effective, reduces the manufacturing cycle time and speeds up delivery."

In the field of NOR Flash, Dongcore adheres to the low-power ETOX process because of its high reliability, which is especially suitable for industrial, automotive and other high-performance application scenarios.

In terms of DDR products, Dongxin has been able to provide DDR3 standard products from 1Gbit to 4Gbit, and is developing the LPDDR1/2/4X series, which are based on 5G baseband development.

In the application side, Dongxin's products are widely used in industrial control, power operator, power electronics, Netcom base station, light cat, 5G CPE, security IPC, Internet of Things wearable products, collector and automotive electronics and other fields.
In February this year, Dongxin also specially set up a WIFI chip field team, committed to the research and development of WIFI7 and RF technology.

From the perspective of the entire company's operation, Dongxin has always been committed to promoting domestic design in the field of storage industry, and has formed a complete closed loop from product development, production to customer service. Product development is closely aligned with market demand, quality control from Fab to packaging and testing are strictly guaranteed, and is committed to deepening cooperation with domestic industries and customers.