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IRF9Z14SPBF
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IRF9Z14SPBF

IRF9Z14SPBF
Vishay Siliconix
MOSFET P-CH 60V 6.7A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Series
-
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V
Vgs(th) (Max) @ Id
4V @ 250µA
Product Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
IRF9Z14
Package
Tube
Supplier Device Package
D²PAK (TO-263)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Mfr
Vishay Siliconix
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3.7W (Ta), 43W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
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