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SIHA6N80E-GE3
SIHA6N80E-GE3
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SIHA6N80E-GE3

SIHA6N80E-GE3
Vishay Siliconix
MOSFET N-CH 800V 5.4A TO220
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±30V
Mounting Type
Through Hole
Mfr
Vishay Siliconix
Series
E
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
827 pF @ 100 V
Power Dissipation (Max)
31W (Tc)
Package
Tube
Product Status
Active
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Supplier Device Package
TO-220 Full Pack
Drain to Source Voltage (Vdss)
800 V
Package / Case
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C
5.4A (Tc)
Rds On (Max) @ Id, Vgs
940mOhm @ 3A, 10V
FET Feature
-
Base Product Number
SIHA6
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
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