Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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IRFZ34E
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IRFZ34E

IRFZ34E
Infineon Technologies
MOSFET N-CH 60V 28A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Rds On (Max) @ Id, Vgs
42mOhm @ 17A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Obsolete
FET Type
N-Channel
Series
HEXFET®
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Power Dissipation (Max)
68W (Tc)
Mounting Type
Through Hole
FET Feature
-
Mfr
Infineon Technologies
Package
Tube
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V
Supplier Device Package
TO-220AB
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