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BUK9E2R3-40E-127
BUK9E2R3-40E-127
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BUK9E2R3-40E-127

BUK9E2R3-40E-127
NXP USA Inc.
MOSFET N-CH 40V 120A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Mfr
NXP USA Inc.
Supplier Device Package
I2PAK
Base Product Number
BUK9
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
40 V
Gate Charge (Qg) (Max) @ Vgs
87.8 nC @ 5 V
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
13160 pF @ 25 V
Package
Tube
Series
TrenchMOS™
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Vgs(th) (Max) @ Id
2.1V @ 1mA
Power Dissipation (Max)
293W (Tc)
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs (Max)
±10V
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
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