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STB6N60M2
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STB6N60M2

STB6N60M2
STMicroelectronics
MOSFET N-CH 600V 4.5A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
232 pF @ 100 V
Series
MDmesh™ II Plus
Base Product Number
STB6N60
Product Status
Active
FET Type
N-Channel
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±25V
Mfr
STMicroelectronics
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D2PAK
FET Feature
-
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