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PHB47NQ10T-118
PHB47NQ10T-118
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PHB47NQ10T-118

PHB47NQ10T-118
Nexperia USA Inc.
MOSFET N-CH 100V 47A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Power Dissipation (Max)
166W (Tc)
Product Status
Active
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 25 V
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Mounting Type
Surface Mount
Base Product Number
PHB47NQ10
Mfr
Nexperia USA Inc.
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 175°C (TJ)
Series
TrenchMOS™
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
28mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
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