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SI4464DY-T1-GE3
SI4464DY-T1-GE3
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SI4464DY-T1-GE3

SI4464DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 1.7A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
200 V
Mfr
Vishay Siliconix
Power Dissipation (Max)
1.5W (Ta)
Base Product Number
SI4464
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
8-SOIC
FET Type
N-Channel
Series
TrenchFET®
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
240mOhm @ 2.2A, 10V
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