Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. PMV25ENEAR
PMV25ENEAR
PMV25ENEAR
Favorite Products
Share:  

PMV25ENEAR

PMV25ENEAR
Nexperia USA Inc.
MOSFET N-CH 30V 5.5A TO236AB
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Base Product Number
PMV25
Input Capacitance (Ciss) (Max) @ Vds
597 pF @ 15 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-236AB
Series
Automotive, AEC-Q101
Product Status
Active
Rds On (Max) @ Id, Vgs
24mOhm @ 5.5A, 10V
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Feature
-
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
460mW (Ta), 6.94W (Tc)
Mfr
Nexperia USA Inc.
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Package / Case
TO-236-3, SC-59, SOT-23-3
TOP
RFQ List ( 0 items)