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SIHD9N60E-GE3
SIHD9N60E-GE3
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SIHD9N60E-GE3

SIHD9N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 9A DPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SIHD9
Series
E
Power Dissipation (Max)
78W (Tc)
Package
Tube
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Supplier Device Package
TO-252AA
Product Status
Active
Vgs(th) (Max) @ Id
4.5V @ 250µA
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Mfr
Vishay Siliconix
Rds On (Max) @ Id, Vgs
368mOhm @ 4.5A, 10V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
778 pF @ 100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
600 V
FET Feature
-
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