Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

Favorite Products

Share:

STI14NM65N

Product Name STI14NM65N

Manufacturer STMicroelectronics

Describe MOSFET N-CH 650V 12A I2PAK

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

Customer Reference

Available In Stock

Please send RFQ, we will respond immediately

Just Fill in the content with an*

Contact Information

(You can also Log In and fill in automatically)

Message Content *

*

Company Name

*

Contact Name

*

Telephone

*

Email *

*

Product Attributes

Type PARAMETERS

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 50 V

Mfr

STMicroelectronics

Mounting Type

Through Hole

Product Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Series

MDmesh™ II

Package

Tube

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

45 nC @ 10 V

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FET Feature

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Power Dissipation (Max)

125W (Tc)

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Vgs (Max)

±25V

Supplier Device Package

I2PAK

Base Product Number

STI14N

Related Products

2SK3306B-S17-AY

Renesas Electronics America Inc

IRF7821TRPBF

Infineon Technologies

IRF6641TRPBF

International Rectifier

IRFR12N25DCTRRP

Infineon Technologies

PMZB420UN-315

NXP USA Inc.

NDB6060L

onsemi

2SK3142-E

Renesas Electronics America Inc

IRF6706S2TR1PBF

Infineon Technologies

Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

[email protected]

(93638)

Contact Us

WhatsApp:

86-18576417887

telephone:

+86 18576417887

E-Mail:

[email protected]

Skype:

guoyaolong520

TOP

RFQ List ( 0 items)