Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRFZ48Z
IRFZ48Z
IRFZ48Z
Favorite Products
Share:  

IRFZ48Z

IRFZ48Z
Infineon Technologies
MOSFET N-CH 55V 61A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
Series
HEXFET®
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Power Dissipation (Max)
91W (Tc)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
FET Feature
-
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Rds On (Max) @ Id, Vgs
11mOhm @ 37A, 10V
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
1720 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
TOP
RFQ List ( 0 items)