Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SI4634DY-T1-E3
SI4634DY-T1-E3
SI4634DY-T1-E3
Favorite Products
Share:  

SI4634DY-T1-E3

SI4634DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 24.5A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Current - Continuous Drain (Id) @ 25°C
24.5A (Tc)
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Supplier Device Package
8-SOIC
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Series
TrenchFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Base Product Number
SI4634
Product Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs
5.2mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3150 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
TOP
RFQ List ( 0 items)