Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF3000
IRF3000
IRF3000
Favorite Products
Share:  

IRF3000

IRF3000
Infineon Technologies
MOSFET N-CH 300V 1.6A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Series
HEXFET®
Mfr
Infineon Technologies
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 25 V
Mounting Type
Surface Mount
Package
Tube
Drain to Source Voltage (Vdss)
300 V
Rds On (Max) @ Id, Vgs
400mOhm @ 960mA, 10V
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
5V @ 250µA
Supplier Device Package
8-SO
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
TOP
RFQ List ( 0 items)