[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. TN2106N3-G
TN2106N3-G
TN2106N3-G
Favorite Products
Share:  

TN2106N3-G

TN2106N3-G
Microchip Technology
MOSFET N-CH 60V 300MA TO92-3
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
740mW (Tc)
Vgs(th) (Max) @ Id
2V @ 1mA
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Mfr
Microchip Technology
Series
-
Package
Bag
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
60 V
Supplier Device Package
TO-92-3
Base Product Number
TN2106
Product Status
Active
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C
300mA (Tj)
Related Products
IPD90N06S4L06ATMA1

Infineon Technologies
NVMYS2D1N04CLTWG

onsemi
P3M06060G7

PN Junction Semiconductor
IRF3415S

Infineon Technologies
TK5R1P08QM-RQ

Toshiba Semiconductor and Storage
APT28F60B

Microsemi Corporation
PHP101NQ04T-127

NXP USA Inc.
AOT16N50

Alpha & Omega Semiconductor Inc.

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)