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SPU11N10

SPU11N10
Infineon Technologies
MOSFET N-CH 100V 10.5A TO251-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
Product Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Mfr
Infineon Technologies
Supplier Device Package
P-TO251-3-1
FET Type
N-Channel
Series
SIPMOS®
Base Product Number
SPU11N
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 21µA
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