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IRFU3711PBF

IRFU3711PBF
Infineon Technologies
MOSFET N-CH 20V 100A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
Product Status
Obsolete
FET Type
N-Channel
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 15A, 10V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
Power Dissipation (Max)
2.5W (Ta), 120W (Tc)
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