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IRF630PBF-BE3
IRF630PBF-BE3
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IRF630PBF-BE3

IRF630PBF-BE3
Vishay Siliconix
MOSFET N-CH 200V 9A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Package
Tube
Base Product Number
IRF630
FET Feature
-
Series
-
Supplier Device Package
TO-220AB
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Mounting Type
Through Hole
Package / Case
TO-220-3
Mfr
Vishay Siliconix
Vgs (Max)
±20V
Power Dissipation (Max)
74W (Tc)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
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