Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SI4418DY-T1-E3
SI4418DY-T1-E3
SI4418DY-T1-E3
Favorite Products
Share:  

SI4418DY-T1-E3

SI4418DY-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 2.3A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Base Product Number
SI4418
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
130mOhm @ 3A, 10V
FET Feature
-
Supplier Device Package
8-SOIC
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
200 V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Series
TrenchFET®
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Power Dissipation (Max)
1.5W (Ta)
Vgs(th) (Max) @ Id
4V @ 250µA
TOP
RFQ List ( 0 items)