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IRF8736PBF
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IRF8736PBF

IRF8736PBF
Infineon Technologies
MOSFET N-CH 30V 18A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
8-SOIC (0.154", 3.90mm Width)
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Supplier Device Package
8-SO
Rds On (Max) @ Id, Vgs
4.8mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2315 pF @ 15 V
Mfr
Infineon Technologies
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Product Status
Discontinued at Digi-Key
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Power Dissipation (Max)
2.5W (Ta)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Series
HEXFET®
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