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IRLR3303TRR
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IRLR3303TRR

IRLR3303TRR
Infineon Technologies
MOSFET N-CH 30V 35A DPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
D-Pak
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
31mOhm @ 21A, 10V
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Mfr
Infineon Technologies
Vgs (Max)
±16V
Power Dissipation (Max)
68W (Tc)
Product Status
Obsolete
Vgs(th) (Max) @ Id
1V @ 250µA
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Series
HEXFET®
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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