Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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IRFU321
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IRFU321

IRFU321
Harris Corporation
N-CHANNEL POWER MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Mfr
Harris Corporation
Mounting Type
Through Hole
Power Dissipation (Max)
50W (Tc)
Series
-
Drain to Source Voltage (Vdss)
350 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
I-PAK
Product Status
Active
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Package
Bulk
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
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