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SIHG24N65E-E3
SIHG24N65E-E3
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SIHG24N65E-E3

SIHG24N65E-E3
Vishay Siliconix
MOSFET N-CH 650V 24A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Series
-
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
145mOhm @ 12A, 10V
Package
Tube
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-247-3
Mfr
Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
250W (Tc)
Mounting Type
Through Hole
FET Feature
-
Supplier Device Package
TO-247AC
FET Type
N-Channel
Base Product Number
SIHG24
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2740 pF @ 100 V
Vgs (Max)
±30V
Operating Temperature
-55°C ~ 150°C (TJ)
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