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SI5406DC-T1-GE3
SI5406DC-T1-GE3
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SI5406DC-T1-GE3

SI5406DC-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 6.9A 1206-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta)
Mfr
Vishay Siliconix
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5406
FET Feature
-
Package
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±8V
Rds On (Max) @ Id, Vgs
20mOhm @ 6.9A, 4.5V
Series
TrenchFET®
Vgs(th) (Max) @ Id
600mV @ 1.2mA (Min)
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1.3W (Ta)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Supplier Device Package
1206-8 ChipFET™
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