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IRFSL23N20D

Product Name IRFSL23N20D

Manufacturer Infineon Technologies

Describe MOSFET N-CH 200V 24A TO262

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Package

Tube

FET Feature

-

Vgs(th) (Max) @ Id

5.5V @ 250µA

Supplier Device Package

TO-262

Series

HEXFET®

Product Status

Obsolete

Input Capacitance (Ciss) (Max) @ Vds

1960 pF @ 25 V

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Drain to Source Voltage (Vdss)

200 V

Vgs (Max)

±30V

Mfr

Infineon Technologies

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Gate Charge (Qg) (Max) @ Vgs

86 nC @ 10 V

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

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