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SIR4608DP-T1-GE3
SIR4608DP-T1-GE3
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SIR4608DP-T1-GE3

SIR4608DP-T1-GE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) MOSFET POWE
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
11.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 30 V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Mounting Type
Surface Mount
Base Product Number
SIR4608
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C
13.1A (Ta), 42.8A (Tc)
Package / Case
PowerPAK® SO-8
Drain to Source Voltage (Vdss)
60 V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Supplier Device Package
PowerPAK® SO-8
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