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R6020ENXC7G
R6020ENXC7G
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R6020ENXC7G

R6020ENXC7G
Rohm Semiconductor
600V 20A TO-220FM, LOW-NOISE POW
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Type
N-Channel
Power Dissipation (Max)
68W (Tc)
Rds On (Max) @ Id, Vgs
196mOhm @ 9.5A, 10V
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package
Tube
Product Status
Active
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
Package / Case
TO-220-3 Full Pack
Mfr
Rohm Semiconductor
Series
-
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600 V
FET Feature
-
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