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SIHG21N80AE-GE3
SIHG21N80AE-GE3
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SIHG21N80AE-GE3

SIHG21N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 17.4A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SIHG21
Drain to Source Voltage (Vdss)
800 V
Power Dissipation (Max)
32W (Tc)
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
FET Feature
-
Mfr
Vishay Siliconix
Vgs (Max)
±30V
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Supplier Device Package
TO-247AC
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
17.4A (Tc)
Series
E
Package
Tube
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
Package / Case
TO-247-3
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