Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SISS61DN-T1-GE3
SISS61DN-T1-GE3
SISS61DN-T1-GE3
Favorite Products
Share:  

SISS61DN-T1-GE3

SISS61DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 30.9/111.9A PPAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
900mV @ 250µA
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
8740 pF @ 10 V
Power Dissipation (Max)
5W (Ta), 65.8W (Tc)
Supplier Device Package
PowerPAK® 1212-8S
Vgs (Max)
±8V
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS61
Gate Charge (Qg) (Max) @ Vgs
231 nC @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Mfr
Vishay Siliconix
Series
TrenchFET® Gen III
Product Status
Active
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 15A, 4.5V
TOP
RFQ List ( 0 items)