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IRF1902PBF

IRF1902PBF
Infineon Technologies
MOSFET N-CH 20V 4.2A 8SO
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Vgs (Max)
±12V
Mounting Type
Surface Mount
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
700mV @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 15 V
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
85mOhm @ 4A, 4.5V
Series
HEXFET®
FET Feature
-
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Package
Tube
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