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IRF3315STRR

IRF3315STRR
Infineon Technologies
MOSFET N-CH 150V 21A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Vgs(th) (Max) @ Id
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Mfr
Infineon Technologies
Package
Tape & Reel (TR)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Power Dissipation (Max)
3.8W (Ta), 94W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs
82mOhm @ 12A, 10V
Mounting Type
Surface Mount
Product Status
Obsolete
Drain to Source Voltage (Vdss)
150 V
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Series
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Supplier Device Package
D2PAK
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