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IRFSL33N15D
IRFSL33N15D
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IRFSL33N15D

IRFSL33N15D
Infineon Technologies
MOSFET N-CH 150V 33A TO262
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
150 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5.5V @ 250µA
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds
2020 pF @ 25 V
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
56mOhm @ 20A, 10V
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Vgs (Max)
±30V
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)
Supplier Device Package
TO-262
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
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