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R6535ENZC17
R6535ENZC17
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R6535ENZC17

R6535ENZC17
Rohm Semiconductor
MOSFET N-CH 650V 35A TO3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
115mOhm @ 18.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
Supplier Device Package
TO-3PF
Mfr
Rohm Semiconductor
Vgs(th) (Max) @ Id
4V @ 1.21mA
Vgs (Max)
±20V
FET Feature
-
Product Status
Active
Power Dissipation (Max)
102W (Tc)
Mounting Type
Through Hole
Base Product Number
R6535
Package
Tube
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Package / Case
TO-3P-3 Full Pack
Series
-
FET Type
N-Channel
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
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