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SI4410DY

SI4410DY
Infineon Technologies
MOSFET N-CH 30V 10A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Product Status
Obsolete
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 10A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SO
Vgs (Max)
±20V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 15 V
Package
Tube
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Power Dissipation (Max)
2.5W (Ta)
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Series
HEXFET®
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