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IRF7832Z
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IRF7832Z

IRF7832Z
Infineon Technologies
MOSFET N-CH 30V 21A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
21A (Ta)
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
3860 pF @ 15 V
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 4.5 V
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SO
Mfr
Infineon Technologies
FET Type
N-Channel
Vgs(th) (Max) @ Id
2.35V @ 250µA
Series
HEXFET®
Package
Tube
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