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RF4E080GNTR
RF4E080GNTR
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RF4E080GNTR

RF4E080GNTR
Rohm Semiconductor
MOSFET N-CH 30V 8A HUML2020L8
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Rohm Semiconductor
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Series
-
Product Status
Active
Technology
MOSFET (Metal Oxide)
Package / Case
8-PowerUDFN
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Operating Temperature
150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Power Dissipation (Max)
2W (Ta)
Mounting Type
Surface Mount
Base Product Number
RF4E080
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Supplier Device Package
HUML2020L8
Rds On (Max) @ Id, Vgs
17.6mOhm @ 8A, 10V
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 15 V
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