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IRF7326D2
IRF7326D2
IRF7326D2
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IRF7326D2

IRF7326D2
Infineon Technologies
MOSFET P-CH 30V 3.6A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
30 V
Mounting Type
Surface Mount
Product Status
Obsolete
Power Dissipation (Max)
2W (Ta)
FET Feature
Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
Mfr
Infineon Technologies
Package
Tube
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SO
Series
FETKY™
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
100mOhm @ 1.8A, 10V
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