Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SI8435DB-T1-E1
SI8435DB-T1-E1
SI8435DB-T1-E1
Favorite Products
Share:  

SI8435DB-T1-E1

SI8435DB-T1-E1
Vishay Siliconix
MOSFET P-CH 20V 10A 4MICROFOOT
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Obsolete
Vgs(th) (Max) @ Id
1V @ 250µA
Mfr
Vishay Siliconix
Rds On (Max) @ Id, Vgs
41mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 10 V
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.78W (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-XFBGA, CSPBGA
Series
TrenchFET®
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 5 V
Vgs (Max)
±5V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Base Product Number
SI8435
Drain to Source Voltage (Vdss)
20 V
Supplier Device Package
4-Microfoot
TOP
RFQ List ( 0 items)