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SI7456DP-T1-GE3
SI7456DP-T1-GE3
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SI7456DP-T1-GE3

SI7456DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 5.7A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
25mOhm @ 9.3A, 10V
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
PowerPAK® SO-8
Vgs (Max)
±20V
Mounting Type
Surface Mount
Mfr
Vishay Siliconix
Package
Tape & Reel (TR)^^Cut Tape (CT)
Package / Case
PowerPAK® SO-8
Base Product Number
SI7456
Series
TrenchFET®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Power Dissipation (Max)
1.9W (Ta)
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
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