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SIR401DP-T1-GE3
SIR401DP-T1-GE3
SIR401DP-T1-GE3
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SIR401DP-T1-GE3

SIR401DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 50A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±12V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
9080 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
FET Feature
-
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Mfr
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Base Product Number
SIR401
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
5W (Ta), 39W (Tc)
Supplier Device Package
PowerPAK® SO-8
Series
TrenchFET®
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