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IRFP4668PBF

IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
241 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
FET Feature
-
Package / Case
TO-247-3
Base Product Number
IRFP4668
FET Type
N-Channel
Supplier Device Package
TO-247AC
Mounting Type
Through Hole
Mfr
Infineon Technologies
Series
HEXFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Package
Tube
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Rds On (Max) @ Id, Vgs
9.7mOhm @ 81A, 10V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10720 pF @ 50 V
Power Dissipation (Max)
520W (Tc)
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