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IPSH5N03LA-G
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IPSH5N03LA-G

IPSH5N03LA-G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Product Status
Obsolete
Package / Case
TO-251-3 Stub Leads, IPak
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds
2653 pF @ 15 V
Mounting Type
Through Hole
Base Product Number
IPSH5N
Package
Tube
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 35µA
FET Feature
-
Supplier Device Package
PG-TO251-3-11
Power Dissipation (Max)
83W (Tc)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
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