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IRF7853TRPBF
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IRF7853TRPBF

IRF7853TRPBF
Infineon Technologies
MOSFET N-CH 100V 8.3A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
100 V
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 25 V
Base Product Number
IRF7853
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Series
HEXFET®
Vgs(th) (Max) @ Id
4.9V @ 100µA
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Product Status
Active
Rds On (Max) @ Id, Vgs
18mOhm @ 8.3A, 10V
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
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