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SI8499DB-T2-E1
SI8499DB-T2-E1
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SI8499DB-T2-E1

SI8499DB-T2-E1
Vishay Siliconix
MOSFET P-CH 20V 16A 6MICRO FOOT
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
TrenchFET®
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 1.5A, 4.5V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs(th) (Max) @ Id
1.3V @ 250µA
Mfr
Vishay Siliconix
Package / Case
6-UFBGA
Drain to Source Voltage (Vdss)
20 V
FET Feature
-
Power Dissipation (Max)
2.77W (Ta), 13W (Tc)
Product Status
Active
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Supplier Device Package
6-Micro Foot™ (1.5x1)
Base Product Number
SI8499
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