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IRFB260NPBF
IRFB260NPBF
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IRFB260NPBF

IRFB260NPBF
Infineon Technologies
MOSFET N-CH 200V 56A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
200 V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB260
Mfr
Infineon Technologies
Package
Tube
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4220 pF @ 25 V
Power Dissipation (Max)
380W (Tc)
Mounting Type
Through Hole
Series
HEXFET®
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
40mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
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