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SCT3080KW7TL
SCT3080KW7TL
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SCT3080KW7TL

SCT3080KW7TL
Rohm Semiconductor
SICFET N-CH 1200V 30A TO263-7
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
TO-263-7
Mfr
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 18 V
Vgs (Max)
+22V, -4V
Product Status
Active
Operating Temperature
175°C (TJ)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number
SCT3080
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Power Dissipation (Max)
159W
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 800 V
Mounting Type
Surface Mount
Technology
SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id
5.6V @ 5mA
FET Feature
-
Series
-
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